Crack stops

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United States of America Patent

PATENT NO 6025639
SERIAL NO

09061538

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Crack stops for substantially preventing cracks and chips produced along the dicing channel from spreading into the active areas of the ICs are described. The crack stops are formed by creating discontinuities in the thickness of the dielectric layer in the dicing channel near the chip edges. The discontinuities can result in increasing and/or decreasing the thickness of the dielectric layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI GYEONGGI-DO 443-742

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Tze-Chiang Yorktown Heights, NY 103 1434
Mitwalsky, Alexander R Poughkeepsie, NY 4 132

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