Method for measuring epitaxial film thickness of multilayer epitaxial wafer
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United States of America Patent
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Feb 15, 2000
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N/A
app pub date -
Feb 5, 1998
filing date -
Feb 6, 1997
priority date (Note) -
Expired
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Abstract
In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500 cm.sup.-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.
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