Radioactive rays detection semiconductor device
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United States of America Patent
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Feb 1, 2000
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app pub date -
May 13, 1998
filing date -
May 13, 1997
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Abstract
The present invention intends to provide a radioactive rays detection semiconductor device comprises a substrate, an insulating layer formed on the substrate, p-type Si films formed on the insulating layer and equal in resistance value change rates due to temperature change and different in thickness so as to differ in the changes of the resistance values corresponding to the change of the total dose of the radioactive rays, an insulating film covering the p-type Si films, electrodes deposited in contact holes which are formed in the insulating film to reach both end of the p-type Si films, and Al wiring connecting the electrodes close to each other.
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