Method of producing a thin layer of semiconductor material
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United States of America Patent
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Feb 1, 2000
Grant Date -
N/A
app pub date -
May 14, 1997
filing date -
May 15, 1996
priority date (Note) -
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Abstract
A thin layer of semiconductor material is produced by implanting ions through a flat face of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face. The resulting wafer is then subjected to a thermal treatment step in order to achieve coalescence of the microcavities. During or following the thermal treatment, a thin layer is separated from the rest of the wafer by application of mechanical force.
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