Process for manufacturing a sensor with a metal electrode in a metal oxide semiconductor (MOS) structure
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United States of America Patent
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Jan 25, 2000
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N/A
app pub date -
Oct 9, 1997
filing date -
Oct 10, 1996
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Abstract
The invention relates to a process for manufacturing a sensor with a metal electrode in an MOS structure. During the MOS process, a sensing region with a structure for the metal electrode is formed, this structure being made of a material having predetermined adhesion properties for metals, the sensing region being uncovered by etching the passivating layer, and a metallization of the surface of the MOS structure being carried out in which the metal layer adheres only to the structure for the metal electrode.
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