Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 4, 2000
Grant Date -
N/A
app pub date -
Apr 22, 1997
filing date -
Apr 23, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully