Semiconductor device having metal alloy for electrodes
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United States of America Patent
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Jan 4, 2000
Grant Date -
N/A
app pub date -
Feb 23, 1998
filing date -
Feb 21, 1997
priority date (Note) -
Expired
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Abstract
In a metal alloy formed by first and second metal members for a semiconductor device, the first metal member is composed of approximately 0.1 to 10 wt. percent Cu with the residual amount being substantially composed of Al, and the second metal member is composed of approximately 0.5 to 5 wt. percent with the residual amount being substantially composed of Au.
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