Optoelectronically gated microstructure
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United States of America Patent
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Jan 4, 2000
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N/A
app pub date -
May 7, 1998
filing date -
Sep 1, 1995
priority date (Note) -
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Abstract
A solid state microstructure comprises a substrate (10,50,80), a detector element extending outwardly from a surface of the substrate and having first (14,60,88) and second (16,64,90) electrodes on opposing sides thereof, the detector element incorporating an onboard optoelectrically-triggered gating structure. Gating may be achieved by flooding a specified area of the detector element with gating light, preferably from a laser, thereby causing that region to become conductive.
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