Pillar emitter for BiCMOS devices
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United States of America Patent
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Jan 4, 2000
Grant Date -
N/A
app pub date -
Oct 19, 1992
filing date -
Oct 19, 1992
priority date (Note) -
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Abstract
A monolithic semiconductor device includes a field effect transistor and a bipolar junction transistor with a pillar emitter structure. The pillar structure raises the BJT emitter above the surface of a trenched base. Ions implanted into the base trench diffuses into an extrinsic base contact region. The pillar elevation structure increases travel distance between the trench and the emitter and protects against encroachment without increasing the total emitter area allocated to the BJT device. A spacer oxide adjacent to the pillar separates the pillar from the trench-region implanted with ions.
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