Method of nitriding silicon
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United States of America Patent
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Dec 28, 1999
Issued Date -
N/A
app pub date -
Jul 5, 1994
filing date -
Nov 3, 1992
priority date (Note) -
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Abstract
A process for nitriding materials containing silicon to form a silicon nitride material predominantly in the alpha phase is disclosed which includes nitriding the silicon-containing material by (a) heating the silicon-containing material in an atmosphere containing at least hydrogen in the temperature range of about 0.degree. C. to about 800.degree. C. and (b) thereafter, nitriding the silicon-containing material by subjecting the silicon-containing material to a nitriding atmosphere containing at least nitrogen gas in the temperature range of from about 1000.degree. C. to about 1450.degree. C. to effect nitriding.
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