SOI substrate and a method for fabricating the same
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United States of America Patent
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Dec 21, 1999
Grant Date -
N/A
app pub date -
Aug 30, 1996
filing date -
Mar 29, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An SOI substrate and a method for fabricating the same are provided to sharpen the departing angle at the circumference of the active substrate, and provide the active substrate with a uniform thickness. An attached wafer of the present invention is formed by processing the upper side of the base substrate so that its thickness increases from the center to the circumference, and attaching the active substrate to the processed side of the base substrate. The unattached portion of the attached wafer is removed. Then mirror processing is performed to provide the active substrate with a substantially uniform thickness along the processed side of the base substrate.
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