Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
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United States of America Patent
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Dec 21, 1999
Issued Date -
N/A
app pub date -
Jan 22, 1999
filing date -
Apr 22, 1997
priority date (Note) -
Expired
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Abstract
A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.
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