Aluminum nitride sintered body, metal embedded article, electronic functional material and electrostatic chuck
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United States of America Patent
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Dec 14, 1999
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N/A
app pub date -
Mar 25, 1997
filing date -
Mar 29, 1996
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Abstract
In AlN crystal grains constituting a sintered body, is contained: 150 ppm-0.5 wt. %, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably at most 500 ppm of at least one metal impurity except rare earth elements; and preferably at least 0.5 wt. % of oxygen measured by an electron probe X-ray microanalyzer. The grains have an average grain diameter of preferably at least 3.0 .mu.m and show a main peak in the wavelength range of 350-370 nm of spectrum obtained by a cathode luminescence method. The sintered body composed of AlN crystal grains has a volume resistivity at room temperature of at most 1.0.times.10.sup.12 .OMEGA..multidot.cm.
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