Chemical vapor infiltration method with variable infiltration parameters
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United States of America Patent
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Dec 14, 1999
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N/A
app pub date -
Oct 6, 1997
filing date -
Apr 7, 1995
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Abstract
Between the start and the end of the chemical vapor infiltration process, filtration conditions are modified by causing at least one of the following infiltration parameters to vary: retention time of the gas, pressure, temperature, concentration of precursor in the gas, and concentration of dopant, if any, in the gas; thereby adapting infiltration conditions to changes in the porometry of the substrate in order to control the microstructure of the material deposited within the substrate, in particular in order to conserve a microstructure that is constant.
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