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Abstract

A magnetron sputtering source and a method of use thereof on which the sputtering source has at least two toroidal magnetron electron taps each defining a maximum of a magnetic field strength component in a radial direction along a surface of the sputtering source. Thereby, from each one of a ring zone on a first smaller radius R.sub.1F and a second larger radius R.sub.2F, a plane of the workpiece in a holder facing the sputtering source has a corresponding distance d.sub.1 and d.sub.2. A value d assumes all possible values of d1 and d2. In particular, 0.8.ltoreq.(R.sub.2F -R.sub.1F)/d.ltoreq.3.0 and preferably 1.0.ltoreq.(R.sub.2F -R.sub.1F)/d.ltoreq.2.2. The arrangement defines a sputtering geometry with the process space essentially at very short target-to-substrate distance and with a defined dual concentric narrow plasma discharge with correspondingly defined concentrated plasma inclusion, whereby the substrate damage is reduced and high process economies are achieved.

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