Apparatus and a method for measuring a density of defects existing in a semiconductor wafer and an apparatus and a method for measuring an inherent scattering intensity of defects existing in a semiconductor wafer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 30, 1999
Grant Date -
N/A
app pub date -
Sep 3, 1998
filing date -
Sep 4, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A laser is irradiated on the surface of a semiconductor wafer while a stage mounted on the semiconductor wafer is moved, and scattering lights emitted from the surface of the semiconductor wafer is received by the receiving device, and an intensity distribution of the scattering lights is measured. The intensity distribution is processed by the controller so as to obtain a defect density of the semiconductor wafer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully