Semiconductor integrated circuit device including boron-doped phospho silicate glass layer and manufacturing method thereof
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United States of America Patent
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Nov 30, 1999
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N/A
app pub date -
Jul 26, 1996
filing date -
Jul 26, 1996
priority date (Note) -
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Abstract
A semiconductor integrated circuit device is provided in which an interlayer insulation film deposited on a semiconductor chip includes a boron-containing silicon oxide film and a second film deposited on the boron-containing silicon oxide film. A guard ring is disposed adjacent to the periphery of the semiconductor chip, and a slit is disposed between the guard ring and the periphery of the chip. The depth of the slit is selected such that cracks formed on the boundary between the BPSG film and the second film are inhibited by the slit from intruding further along the boundary to the inside of the chip, thereby preventing moisture or obstacles from reaching the inside of the chip through the cracks.
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