Method of making gate and source lines in TFT LCD panels using pure aluminum metal
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 30, 1999
Grant Date -
N/A
app pub date -
Sep 12, 1997
filing date -
Sep 12, 1997
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The invention provides a method of making low-resistance conductors on LCD glass panels for use in the fabrication and interconnection of thin film transistors in active-matrix LCDs. The conductors include pure aluminum metal, which has low resistivity and is suitable for the longer lines and conductors required in large-size (18-inch or more, measured diagonally) LCD panels with resolutions of XGA or better. An underlayer of titanium is first deposited on the glass, followed by an overlaer of aluminum. The Al/Ti conductive sheet material is then masked and etched to form lines and other conductors on the LCD glass substrate. A layer of gate dielectric is then deposited, preferably at a temperature of 300.degree. C. or below. The invention minimizes hillock formation on the aluminum conductors without the additional cost and steps of depositing a capping layer of metal overlying the aluminum, and without the use of acid-treated glass.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully