Production of notchless wafer
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United States of America Patent
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-
Nov 30, 1999
Grant Date -
N/A
app pub date -
Mar 9, 1998
filing date -
Mar 11, 1997
priority date (Note) -
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status (Latency Note)
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Abstract
A shallow notch 1 as a tentative mark is engraved on a periphery of an ingot at a position corresponding to a predetermined crystal orientation in the step of grinding the periphery of the ingot. After the ingot is sliced to wafers, a mark 2 for indication of a crystal orientation is carved on a sliced wafer at a position determined on the basis of the notch 1 by laser marking. Thereafter, the wafer is chamfered to a round shape, and the notch 1 is removed by the chamfering. Since a part where the mark 2 shall be carved is determined on the basis of the notch 1, the mark 2 is efficiently carved on the wafer without the necessity of subjecting each wafer to an X-ray analyzer.
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