Semiconductor memory capable of writing and reading data
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United States of America Patent
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Nov 9, 1999
Grant Date -
N/A
app pub date -
Sep 24, 1998
filing date -
Oct 22, 1997
priority date (Note) -
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Abstract
A nonvolatile semiconductor memory serving as a semiconductor memory which is capable of erasing data in a batch comprises four banks constituting a storage circuit, a bank control circuit for instructing access to respective banks (writing, reading, etc.), and a status signal output circuit connected to the bank control circuit. The status signal output circuit outputs status signals for instructing access status of respective banks. The status signals are outputted to an external device through a data bus. With such a construction, the access status of respective banks can be easily grasped, so that the data access to the semiconductor memory can be enhanced with efficiency, thereby realizing high speed data processing.
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