Pixel cells and pixel cell arrays having low leakage and improved performance characteristics
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United States of America Patent
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Nov 9, 1999
Grant Date -
N/A
app pub date -
Jan 14, 1998
filing date -
Jan 14, 1998
priority date (Note) -
Expired
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Abstract
The present invention relates to a pixel cell and pixel cell array modified to improve performance. One improvement taught by the present invention is implantation of dopant into the silicon to form the base region after formation of polysilicon, resulting in highest base dopant concentrations lying at the thin oxide and emitter interfaces. A second improvement taught by the present invention is a reduction in the size of the heavily doped portion of the emitter to extend no further than the footprint of the emitter contact, thereby inhibiting leakage between the emitter and adjacent polysilicon. A third improvement taught by the present invention is electronic isolation of pixel cells by inter-pixel regions doped with conductivity-altering impurity of a type opposite that of the base rather than by field oxides, thereby eliminating leakage at the field oxide edge. A fourth improvement disclosed by the present invention is the introduction of silicides at the emitter contact and the base capacitor contact in order to reduce contact resistance.
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