Dual gated power electronic switching devices
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United States of America Patent
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Nov 9, 1999
Issued Date -
N/A
app pub date -
Apr 28, 1997
filing date -
Mar 9, 1994
priority date (Note) -
Expired
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Abstract
A novel semiconductor switching device is disclosed. The switching device is designed and constructed to include, for example, a highly interdigitated cathode/gate structure on both anode and cathode sides. The semiconductor switching device can be multi-loaded on both anode and cathode sides which provides a great deal of flexibility in operation.
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