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Abstract

Self-alignment process usable in microelectronics to obtain alignment of at least one group of holes, one of said holes (or large diameter hole) being formed in an upper level and the other hole (or small diameter hole) being formed in a lower level of a stacked structure. The process consists of: providing a conducting layer in the structure, said conducting layer possibly being connected to an external electrical circuit, disposing an insulating layer on said conducting layer, piercing the insulating layer with a hole of said small diameter that penetrates as far as the conducting layer, carrying out an electrolytic deposit of a conducting material in the small diameter hole using the conducting layer as the electrode during the electrolysis procedure, said electrolytic deposit filling the small diameter hole from the conducting layer and causing the deposit to overflow onto said insulating layer to give the electrolytically deposited conducting material the shape of a mushroom whose head rests on said insulating layer, the electrolytic deposition being continued until the diameter of the mushroom head attains the size of the large diameter, depositing on the structure thereby obtained a layer of a different type of material from the electrolytically deposited conducting material, removing the mushroom, thereby leaving a large diameter hole aligned with a small diameter hole in the last layer deposited.

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First Claim