Plasma processing apparatus comprising a compensating-process-gas supply means in synchronism with a rotating magnetic field
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United States of America Patent
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Nov 9, 1999
Grant Date -
N/A
app pub date -
Apr 27, 1998
filing date -
May 20, 1997
priority date (Note) -
Expired
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Abstract
A plasma process apparatus includes first and second electrodes or susceptors located in a process container with a space interposed therebetween, first and second electrodes being disposed to support a semiconductor wafer such that the wafers are opposed to each other through a plasma a generating region. A high frequency voltages are applied to the first and second electrodes to supply a high frequency power to the plasma generating region, and a rotating magnetic field is generated in the plasma generating region, so that the high frequency power and the rotating magnetic field generate plasma of a process gas in the plasma generating region. Compensating-process-gas supply mechanism is provided for supplying a compensating process gas to part of the plasma generating region in synchronism with the rotation of the rotating magnetic field to compensate nonuniformity in the density of plasma generated in the plasma generating region.
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