Method for fabricating a single-crystal semiconductor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 19, 1999
Grant Date -
N/A
app pub date -
Mar 31, 1997
filing date -
May 22, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for fabricating a single-crystal semiconductor by means of CZ method is disclosed. The method separates the single-crystal semiconductor from the melt by increasing the lift rate when the growth of a crystal body is finished. By controlling the lift rate, the single-crystal semiconductor is then gradually cooled within a range of an arbitrary crystal temperature, thereby forming a concave separated surface. The single-crystal semiconductor is cooled at a rate of lower than 35.degree. C./min when the temperature of the separated surface is within a range between the melting point and 1000.degree. C., or by keeping the temperature of the separated surface within a range between 1250.degree. C. and 1000.degree. C. for more than 30 minutes. Therefore, no dislocation is introduced in the crystal body, and productivity is improved.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully