Field emission cold cathode with buried insulator layer
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United States of America Patent
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Oct 12, 1999
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N/A
app pub date -
May 28, 1997
filing date -
May 28, 1996
priority date (Note) -
Expired
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Abstract
A field emission cold cathode comprises an n-type silicon substrate (1), a plurality of sharp-pointed emitter cones (2) formed on the n-type silicon substrate (1), and a buried insulator layer (3) formed in the n-type silicon substrate (1) to surround each of underlying regions right under each emitter cone (2). An insulator layer (4) is formed on the n-type silicon substrate (1) and has a plurality of insulator holes so as to surround each emitter cone (2). A gate electrode (5) is formed on the insulator layer (4) and has a plurality of gate holes for extracting electrons from the emitter cones (2).
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