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Abstract

A positive photoresist composition including an alkali-soluble resin and a photosensitive agent including 1,2-naphthoquinone-diazide group. A first composition wherein the photosensitive agent is an ester of 1,2-naphthoquinone-(2)-diazide-6-sulfonic acid and alcohols or phenols, or a sulfonamide of 1,2-naphthoquinone-(2)-diazide-6-sulfonic acid and organic amines. A second composition wherein the photosensitive agent comprises (a) an ester compound of 1,2-naphthoquinone-(2)-diazide-6-sulfonic acid and phenols and (b) an ester of 1,2-naphthoquinone-(2)-diazide-5-sulfonic acid and phenols and/or an ester of 1,2-naphthoquinone-(2)-diazide-4-sulfonic acid and phenols. A third composition wherein the photosensitive agent is a product obtained by condensation of phenols with (a) 1,2-naphthoquinone-(2)-diazide-6-sulfonylhalide and (b) 1,2-naphthoquinone-(2)-diazide-5-sulfonylhalide and/or 1,2-naphthoquinone-(2)-diazide-4-sulfonylhalide. A pattern formation method using the above positive photoresist compositions including: (1) forming a positive photoresist layer on a substrate, (2) exposing the positive photoresist layer to a predetermined pattern, and (3) developing the positive photoresist layer with an alkaline developing solution. This invention allows flexible setting of parameters A and B of the photoresist over a fairly wide range and is particularly suitable for use in the formation of fine patterns for various semiconductor ICs and magnetic valves.

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