Titanium target for sputtering and method of manufacturing same
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United States of America Patent
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Sep 14, 1999
Grant Date -
N/A
app pub date -
Nov 12, 1996
filing date -
Mar 13, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A titanium target for sputtering high in film making efficiency in a contact hole. The crystallization on the target face is caused to be orientated so that the X-ray diffraction strength of the (10 -10) and/or (11 -20) vertical to the close-packed filling face may become 1.1 times or more in a case of the random orientation, and the X-ray diffraction strength of the (0002) parallel to the close-packed filling face may become 1 time or lower in a case of the random orientation. A direction of the sputter grains jumping out of the target face is controlled in a direction vertical to the target face.
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