Plasma deposition method and an apparatus therefor
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United States of America Patent
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Sep 7, 1999
Grant Date -
N/A
app pub date -
Apr 2, 1996
filing date -
Apr 5, 1995
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Expired
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Abstract
A plasma generating gas and a reactive gas are fed into a vacuum container. A magnetic field and microwaves for plasma generation are applied to the vacuum container, whereupon plasma is generated by ECR, and whereupon, for example, an SiO.sub.2 or SiOF film is formed on aluminum wiring. In the initial phase of film deposition, the level of the radio-frequency power for plasma lead-in applied to the stage is adjusted, for example, to zero (first value includes zero) in advance. Then, after the SiO.sub.2 or SiOF film has been deposited to a thickness of tens of nanometers, for example, the radio-frequency power for plasma lead-in is adjusted to a normal power level (second value) and applied to the stage. Thereupon, an intensive anisotropic plasma is generated, and a potential distribution corresponding to the self-bias is formed in the plane direction of the wafer. Since the thin SiO.sub.2 film is formed on the wafer surface, however, the voltage applied to any existing gate oxide film is lowered by this insulating film. Thus, the gate oxide film can be prevented from being damaged.
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