Trench capacitor with epi buried layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 31, 1999
Issued Date -
N/A
app pub date -
Jun 26, 1998
filing date -
Apr 6, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A trench capacitor with an epi layer in the lower portion of the trench. The epi layer serves as the buried plate of the trench capacitor. A diffusion region surrounds the lower portion of the trench to enhance the dopant concentration of the epi layer. The diffusion region is formed by, for example, gas phase doping, plasma doping, or plasma immersion ion implantation.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully