Fabrication method for AlGaIn NPAsSb based devices
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United States of America Patent
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Aug 10, 1999
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N/A
app pub date -
Dec 18, 1997
filing date -
Jan 31, 1995
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Abstract
A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor Al.sub.a Ga.sub.b In.sub.1-a-b N.sub.x P.sub.y As.sub.z Sb.sub.1-x-y-z (0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, 0
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