Plasma processing apparatus for producing plasma at low electron temperatures
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United States of America Patent
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Aug 10, 1999
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N/A
app pub date -
Nov 20, 1996
filing date -
Nov 28, 1995
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Abstract
A plasma processing apparatus includes a plasma chamber and an antenna formed by a first set of parallel antenna elements and a second set of parallel antenna elements, the antenna elements of the first set being interdigitally arranged with those of the second set. An energy source supplies oscillation energy of first phase to the first set of antenna elements and oscillation energy of second, opposite phase to the second set of antenna elements to produce oppositely moving energy fields in the chamber at such a frequency that electrons are confined in a plasma produced in the chamber.
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