Method of oxidation of semiconductor wafers in a rapid thermal processing (RTP) system
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United States of America Patent
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Aug 10, 1999
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app pub date -
Oct 17, 1997
filing date -
Oct 17, 1997
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Abstract
A method of producing a film on the surface of a semiconductor wafer in an RTP system, comprising: a) rapidly processing the wafer at a first temperature T.sub.1 in an atmosphere containing a substantial vapor pressure of a first reactive gas; then b) rapidly processing the wafer at a second temperature T.sub.2 in an atmosphere substantially free of the first reactive gas is described.
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