Pixel structure, image sensor using such pixel structure and corresponding peripheral circuitry
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United States of America Patent
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Aug 3, 1999
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N/A
app pub date -
Apr 18, 1996
filing date -
Apr 18, 1995
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Abstract
A pixel structure for CMOS imaging applications, the pixel structure including a photosensitive element, a load transistor in series with the photosensitive element, a first reading transistor, coupled to the photosensitive element and to the load transistor, for reading out signals acquired in the photosensitive element and converting the signals to a voltage drop across the load transistor. The gate length of at least the load transistor is increased by at least 10% compared to a gate length of transistors manufactured according to layout rules imposed by a CMOS manufacturing process, thereby increasing the light sensitivity of the pixel structure.
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