Method for filling substrate recesses using pressure and heat treatment
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United States of America Patent
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Aug 3, 1999
Issued Date -
N/A
app pub date -
Apr 10, 1997
filing date -
May 28, 1991
priority date (Note) -
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Abstract
A deposit layer is deposited on the exposed surface of a surface layer formed on a semiconductor wafer. The depositing of the deposit layer continues at least until the deposit layer extends over all the recesses to close completely the openings of all of the recesses to thereby form enclosed areas within the recesses which are devoid of a material of the deposit layer. After forming the enclosed areas within the recesses, the wafer and the deposit layer are then subjected to pressure and heat treatment sufficient to cause parts of the deposit layer to deform to fill the enclosed areas within the respective recesses.
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