Non-destructive method and apparatus for monitoring a selected semiconductor characteristic of a semiconductor sample during fabrication
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United States of America Patent
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Jul 27, 1999
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app pub date -
Jan 30, 1997
filing date -
Jan 30, 1997
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Abstract
A non-destructive and non-invasive method for monitoring a selected characteristic of a fabricated semiconductor sample while inside a fabrication chamber and during the fabrication process, where selected materials are deposited on a planar surface of a wafer substrate in a fabrication chamber, employs one or more viewports in the walls of the fabrication chamber. A focused electromagnetic wave is generated external to the fabrication chamber, and directed through a viewport to impinge upon a selected portion of the planar surface of the wafer substrate at an oblique incident angle relative to the planar surface of the wafer substrate. In turn, a reflected electromagnetic wave emanating from the planar surface of the wafer substrate is detected. A signal processor then determines a reflection coefficient as a function of a selected characteristic of the focused electromagnetic wave and the reflected electromagnetic wave.
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