Memory with bit line discharge circuit elements
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United States of America Patent
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Jul 20, 1999
Grant Date -
N/A
app pub date -
Sep 30, 1997
filing date -
May 16, 1997
priority date (Note) -
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Abstract
A memory which solves a problem of a conventional memory in that it was difficult for the conventional memory to shorten the fall time of its output signal without increasing its size. The number of paths is increased for discharging each of read bit lines by connecting to each of the read bit lines one or more additional transistors for discharging the read bit line, and by utilizing the transistors associated with other read bit line or lines to discharge the particular read bit line. The additional transistors can be provided between the existing transistors. This makes it possible to shorten the discharge time without increasing the size of the memory.
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