Method of depositing a polycrystalline diamond layer on a nitride substrate
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United States of America Patent
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Jul 20, 1999
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N/A
app pub date -
Mar 25, 1997
filing date -
Mar 25, 1996
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Expired
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Abstract
A method of depositing a polycrystalline diamond layer on a nitride substrate is disclosed, which comprises chemically-etching the nitride substrate with a KOH or NaOH solution or melt and depositing the polycrystalline diamond layer on the nitride substrate from a vapor phase, wherein the etching temperature, time and concentration of the etchant are controlled so that at least 75% of the interface between the substrate and the diamond layer is covered by diamond crystals, each diamond crystal having a contact area with the substrate of .gtoreq.20 um.sup.2.
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