Method for manufacturing a semiconductor device
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United States of America Patent
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Jul 13, 1999
Issued Date -
N/A
app pub date -
Apr 28, 1995
filing date -
Oct 29, 1993
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Abstract
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
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