Timing scheme for memory arrays

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United States of America Patent

PATENT NO 5923610
SERIAL NO

08957518

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Abstract

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A DRAM includes a data input buffer having a first input terminal coupled to data I/O pins, a second input terminal coupled to a column address buffer, a third input terminal coupled to a column address strobe buffer, and an output terminal coupled to a column decoder. When reading a selected cell of the DRAM, the first row address and the first column address are latched on the falling edge of the row address strobe signal from the address input pins into a row address buffer and from the I/O pins into the data input buffer, respectively, of the DRAM. While the row address is decoded and used to select a row of memory cells of the DRAM, the column address is decoded and used to select one of the cells from the selected row. Data corresponding to the selected cell is forwarded to the I/O pins on the first falling edge of the column address strobe signal. By latching both the first row address and the first column address on the falling edge of the row address strobe signal, the access time of the first column address is hidden.

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Patent Owner(s)

Patent OwnerAddress
AMIC TECHNOLOGY CORPORATIONNO 2 LI-HSIN 6TH ROAD SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Te, Sintiat San Jose, CA 5 24

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