Semiconductor optical waveguide
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United States of America Patent
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Jun 29, 1999
Issued Date -
N/A
app pub date -
May 13, 1998
filing date -
Feb 29, 1996
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Expired
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Abstract
A channel waveguide structure which can be incorporated into VLSI (very large scale integration) integrated circuits uses a SiGe (silicon germanium) alloy core and Si (silicon) top and bottom cladding layers. The core may consist of only a SiGe alloy layer or it may be formed as a superlattice containing Si layers alternating with SiGe alloy layers. LOCOS (locally oxidized silicon) regions are formed on the top cladding layer at spaced locations thereby defining lateral boundaries of channels in the core.
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