Method of reducing metal contamination during semiconductor processing in a reactor having metal components
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United States of America Patent
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Jun 29, 1999
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N/A
app pub date -
Mar 11, 1997
filing date -
Mar 11, 1997
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Abstract
A method of reducing metal contamination during semiconductor processing in a reactor having metal components is provided. The method includes forming an aluminum oxide layer on the surface of certain of the metal components before processing of substrates. The aluminum oxide layer substantially prevents the formation of volatile metal atoms from the metal components. The aluminum oxide layer is formed by heating the metal component first in a dry N.sub.2 atmosphere to a first temperature, and then in a dry H.sub.2 atmosphere to a second temperature. The component is then soaked at the second temperature in a wet H.sub.2 atmosphere to form the aluminum oxide layer, and is followed by soaking at the second temperature in a dry H.sub.2 atmosphere to reduce any other metal oxides that may have formed. The component is then cooled first in a dry H.sub.2 atmosphere, and then in a dry N.sub.2 atmosphere where a layer of substantially pure aluminum oxide is provided on the surface of the metal component.
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