Methods for filling trenches in a semiconductor wafer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 22, 1999
Issued Date -
N/A
app pub date -
Jul 30, 1997
filing date -
Dec 27, 1995
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for filling a trench in a semiconductor wafer that is disposed in a plasma-enhanced chemical vapor deposition chamber. The method includes the step of depositing a protection layer of silicon dioxide over the wafer and into the trench while the wafer is biased at a first RF bias level. The protection layer has a thickness that is insufficient to completely fill the trench. Further, there is provided the step of forming a trench-fill layer of silicon dioxide over the protection layer and into the trench while the wafer is biased at a second RF bias level that is higher than the first bias level.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully