Method for reduction of plasma charging damage during chemical vapor deposition
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United States of America Patent
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Jun 15, 1999
Grant Date -
N/A
app pub date -
Dec 23, 1996
filing date -
Dec 23, 1996
priority date (Note) -
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status (Latency Note)
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Abstract
A graded gap fill process in which, in a high density plasma processing chamber, an insulating layer is deposited on a substrate without causing plasma charge-related damage to the substrate. The insulating layer is disposed above a first layer having trenches formed therein and below a subsequently deposited second layer. A protection layer is first deposited above the first layer using a first set of deposition parameters. This protection layer coats a surface of the first layer in a substantially conformal manner without forming voids in the trenches. A fill layer is then deposited above the protection layer using a second set of deposition parameters. The first set of deposition parameters is selected to reduce plasma charge-related damage relative to the second set of deposition parameters. The combination of the protection layer and the fill layer sufficiently electrically isolates the first layer from the second layer.
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Patent Citation Ranking
- 190 Citation Count
- H01L Class
- 98.75 % this patent is cited more than
- 26 Age