High efficiency light emitting diodes
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 15, 1999
Issued Date -
N/A
app pub date -
May 20, 1997
filing date -
Oct 7, 1994
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Light emitting diodes are disclosed which have increased external efficiency and are formed from silicon carbide substrates. Diodes are produced by a method which includes directing a beam of laser light at one surface of a portion of silicon carbide, and which the laser light is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and then dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion. The resulting diode structure includes reticulate patterned sidewalls that promote increased light emission efficiency.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully