Methods for fabricating microelectronic structures including semiconductor islands
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 25, 1999
Grant Date -
N/A
app pub date -
Aug 16, 1996
filing date -
Aug 16, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for fabricating a microelectronic structure includes the steps of forming a semiconductor island on a substrate and forming a filler material on the substrate and surrounding the semiconductor island. The semiconductor island includes a first semiconductor material and has a planar island surface opposite the substrate. The filler material includes a second semiconductor material and has a planar single crystal surface adjacent the planar island surface opposite the substrate so that the planar island surface and the planar single crystal surface together define a smooth planar surface. The first semiconductor material can be diamond, and the second semiconductor material can be silicon. In addition, a microelectronic circuit can be formed on the filler material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully