Low noise Ge-JFETs
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United States of America Patent
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May 25, 1999
Grant Date -
N/A
app pub date -
Jan 23, 1998
filing date -
Jan 23, 1998
priority date (Note) -
Expired
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Abstract
A Germanium junction field effect transistor (Ge-JFET) is fabricated in a manner to produce low noise and which is particularly suitable for a cryogenic detector. The Ge-JFET in accordance with the present invention comprises a germanium base material on which a phosphorous implanted channel region is implanted thereon. A boron cap layer overlies the channel region. On the cap layer are separately spaced drain and source ohmic contact regions, and a gate ohmic contact region therebetween. The drain and source ohmic contact regions are separately spaced arsenic implant regions and a phosphorous implant region. The gate ohmic contact region is a BF.sub.2 implanted region.
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