Method of manufacturing a semiconductor substrate material
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United States of America Patent
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May 18, 1999
Grant Date -
N/A
app pub date -
Apr 28, 1997
filing date -
Jun 23, 1995
priority date (Note) -
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Abstract
A material for a semiconductor substrate is composed substantially of tungsten and/or molybdenum mixed with 5-30 wt. % copper, 0.002-0.07 wt. % phosphorus, and 0.1-0.5 wt. % one or two materials selected from among cobalt, nickel, and iron. The material is manufactured by mixing together tungsten powder and/or molybdenum powder of 1 .mu.m in particle size, copper powder of 7 .mu.m in particle size, and small amounts of an iron-group metal and phosphorus or phosphorus compound, molding the mixture at a pressure of 1.0 ton/cm.sup.2, and then, sintering the molded body at a temperature which allows solid and liquid to coexist below the melting point of copper.
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