Tape cast silicon carbide dummy wafer
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United States of America Patent
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May 18, 1999
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N/A
app pub date -
Apr 1, 1996
filing date -
Apr 1, 1996
priority date (Note) -
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Abstract
This invention relates to tape casting a silicon carbide slip to eventually produce a silicon carbide wafer having a thickness of between 0.5 and 1 mm and a diameter of at least 150 mm, the wafer preferably having a strength of at least 30 MPa, and a porosity wherein at least 85% of the pores are no larger than 12 microns.
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