One dimensional lithographic proximity correction using DRC shape functions

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United States of America Patent

PATENT NO 5900340
SERIAL NO

08805863

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Abstract

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Integrated circuit designs are continually shrinking in size. Lithographic processes are used to pattern these designs onto a semiconductor substrate. These processes typically require that the wavelength of exposure used during printing be significantly shorter than the smallest dimension of the elements within the circuit design. When this is not the case, the exposure radiation behaves more like a wave than a particle. Additionally, mask manufacturing, photoresist chemical diffusion and etch effects cause pattern transfer distortions. The result is that circuit elements do not print as designed. To counter this effect the designs themselves can be altered so that the final printed results better match the initial desired design. The process of altering designs in this way is called Lithographic Proximity Correction (LPC). Edge assist shapes and edge biasing features are added to integrated circuit designs by shape manipulation functions to perform one dimensional (1-D) LPC.

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Patent Owner(s)

Patent OwnerAddress
SHENZHEN XINGUODU TECHNOLOGY CO LTD518000 17B JINSONG BUILDING TAIRAN 4TH ROAD SHATOU STREET FUTIAN DISTRICT SHENZHEN CITY GUANGDONG PROVINCE SHENZHEN CITY GUANGDONG PROVINCE 518000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Grobman, Warren D Austin, TX 11 540
Kling, Michael E Austin, TX 7 435
Lucas, Kevin D Austin, TX 15 588
Reich, Alfred J Austin, TX 6 391
Roman, Bernard J Austin, TX 24 899

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